• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a device (1) for coating one or more wires (2) by a vapor deposition process, comprising at least: - a treatment chamber (4) defining at least a first treatment zone (4a) and a second treatment zone (4b) in which at least one wire (2) is intended to be coated by implementation of a vapor deposition process, the first and second zones being separated by a wall (5) and the first zone surrounding the second zone or being superimposed on the second zone, - a conveying system (6) configured to transport said at least one wire (2) through the first (4a) and second ( 4b) zones, - a first injection device configured to inject a first gaseous treatment phase into the first zone (4a) and a first evacuation device configured to evacuate the first gaseous residual phase (11d) out of the first zone ( 4a), and - a second injection device configured to inject a second treatment gas phase into the second zone (4b) and a second evacuation device configured to evacuate the second residual gas phase (12d) out of the second zone (4b).
    公开号:FR3044023A1
    申请号:FR1561149
    申请日:2015-11-19
    公开日:2017-05-26
    发明作者:Emilien Buet；Simon Thibaud；Adrien Delcamp；Cedric Descamps
    申请人:Herakles SA；
    IPC主号:
    专利说明:

    BACKGROUND OF THE INVENTION The invention relates to devices and methods for coating one or more wires by a vapor deposition process.
    Ceramic matrix composite (CMC) materials are operated at relatively high operating temperatures. These materials comprise a fibrous reinforcement formed of son made of ceramic material or carbon present in a ceramic matrix.
    During the production of CMC parts, a fibrous texture intended to form the fibrous reinforcement of the part may first be obtained for example by three-dimensional weaving. This fibrous texture is then shaped in order to obtain a fibrous preform having a shape close to that of the part to be manufactured. The preform is then densified to form the matrix and thus obtain the final part, the matrix may for example be wholly or partly formed by a chemical vapor infiltration process ("Chemical Vapor Infiltration", "CVI") or infiltration in the molten state ("Melt-Infiltration", "MI") for example. The yarns may, before the textile shaping step (weaving, braiding, etc.) have been coated with an interphase coating that makes it possible to retard the breakage of fibers of the yarns by cracks that initially begin within the matrix. The defrosting interphase coating may, for example, be formed of a lamellar structure material which, when a crack reaches the interphase, is capable of dissipating the cracking energy by localized scaling. atomic so that the crack is deflected within the interphase. Materials constituting a defragmentation interphase may for example be pyrolytic carbon (PyC) and boron nitride (BN) which have a lamellar structure. The interphase coating may for example be formed by chemical vapor deposition ("Chemical Vapor Deposition", "CVD"), chemical vapor infiltration ("Chemical Vapor Infiltration") or by liquid route.
    Devices capable of continuously coating a plurality of wires with a chemical vapor deposition interphase have been proposed in the literature. Such devices may include a processing chamber through which a plurality of threads to be coated are conveyed by driving by a system of pulleys. A gaseous reactant mixture is injected into the process chamber through an inlet port to form the interphase coating on the wires by chemical vapor deposition. The unreacted gaseous reactant mixture and the reaction byproducts are pumped through an outlet port which is offset from the inlet port along the longitudinal axis of the process chamber. Multilayer interphase coatings can be made by placing in series several units of this type comprising a device for injecting a gas phase as well as a device for evacuating the residual gas phase.
    However, it would be desirable to provide compact devices for producing a multilayer coating by vapor deposition on one or more son. In addition, it may be desirable to provide devices to increase the number of threads that can be processed per unit of time.
    There is therefore a need to provide compact devices for performing a multilayer coating by vapor deposition on one or more son.
    There is also a need to provide devices for increasing the number of threads that can be processed per unit of time.
    OBJECT AND SUMMARY OF THE INVENTION To this end, the invention proposes, according to a first aspect, a device for coating one or more yarns by a vapor deposition process, comprising at least: a treatment chamber defining at least a first treatment zone and a second treatment zone in which at least one wire is intended to be coated by implementation of a vapor deposition process, the first and second zones being separated by a wall and the first zone surrounding the second zone or being superimposed on the second zone, a conveying system configured to transport said at least one wire through the first and second zones, a first injection device configured to inject a first gaseous phase of treatment in the first zone and a first evacuation device configured to evacuate the first residual gaseous phase out of the first zone, and a second injection device configured to inject a second gaseous treatment phase into the second zone and a second evacuation device configured to evacuate the second residual gaseous phase out of the second zone. The invention advantageously provides compact devices for producing a multilayer coating by vapor deposition on one or more son.
    In an exemplary embodiment, the conveying system may be configured to carry out continuously the transport of said at least one wire through the first and second zones. In other words, in this case, the conveying system is configured so that said at least one wire does not stop during its journey through the first and second zones. In this case, said at least one wire is animated with a non-zero speed throughout the duration of its path through the first and second zones.
    The device may further include a heating system configured to heat the first and second treatment zones.
    In an exemplary embodiment, the first zone may extend along a first longitudinal axis and at least one first injection channel may open into the first zone, said first injection channel may be configured to inject a portion. at least the first gaseous phase in the first zone in a first injection direction not parallel to the first longitudinal axis.
    Such a characteristic makes it possible to improve the filling of the section of the first zone with the first gaseous phase and thus makes it possible to further improve the quality of the deposit formed on the son or wires.
    In an exemplary embodiment, the first injection direction forms an angle of between 30 ° and 60 ° with the first longitudinal axis.
    Such a characteristic makes it possible to further improve the quality of the deposit formed on the son or wires.
    Alternatively, the first injection direction may be substantially parallel to the first longitudinal axis.
    In an exemplary embodiment, the second zone may extend along a second longitudinal axis and at least one second injection channel may open in the second zone, said second injection channel may be configured to inject a portion at least the second gaseous phase in the second zone in a second injection direction not parallel to the second longitudinal axis.
    Such a characteristic makes it possible to improve the filling of the section of the second zone with the second gaseous phase and thus makes it possible to further improve the quality of the deposit formed on the son or wires.
    In an exemplary embodiment, the second injection direction forms an angle of between 30 ° and 60 ° with the second longitudinal axis.
    Such a characteristic makes it possible to further improve the quality of the deposit formed on the son or wires.
    In an exemplary embodiment, the first zone may extend along a first longitudinal axis and the first injection device may have injection orifices opening into the first zone, these injection orifices being offset along the first zone. of the first longitudinal axis.
    It is possible to inject in the first zone a distinct portion of the first gaseous phase through each of the injection orifices of the first injection device.
    In an exemplary embodiment, the second zone may extend along a second longitudinal axis and the second injection device may have injection orifices opening into the second zone, these injection orifices being offset along the second zone. of the second longitudinal axis.
    It is possible to inject in the second zone a distinct portion of the second gaseous phase through each of the injection orifices of the second injection device.
    The fact of injecting a gaseous phase into several parts through injection orifices offset along the longitudinal axis of a treatment zone advantageously makes it possible to reduce the generation of undesirable solids out of the useful zone and thus to further improve the quality of the deposit formed.
    In an exemplary embodiment, the wall is coated with a layer reflecting the infrared radiation.
    By "infrared radiation reflecting layer" is meant a layer having a mean reflection coefficient of between 5% and 50% over the wavelength range of 1000 nm to 8000 nm. The presence of such a layer makes it possible to control the temperature imposed in the second zone without having to place a heating system in the second zone. The thickness of the layer reflecting the infrared radiation may be between 0.001 mm and 1 mm. By modifying the thickness of the layer, it is possible to modulate its reflection coefficient of infrared radiation.
    The infrared radiation reflecting layer may for example be indium oxide, tin oxide or indium tin oxide ("Indium Tin Oxide").
    In an exemplary embodiment, the first zone may surround the second zone and the conveying system may further be configured to position the son to be treated circumferentially in each of the first and second zones.
    Such a positioning of the son along the circumference of the treatment zones makes it possible to increase the amount of son treated per unit time compared to the case where these son are positioned rectilinearly.
    In an exemplary embodiment, the conveying system may comprise an element for adjusting the running speed of said at least one wire through the treatment chamber.
    Such a feature advantageously makes it easy to vary the thickness of the layers formed by changing the speed of travel of the at least one wire through the processing chamber.
    The present invention also relates to a process for coating one or more yarns by a vapor deposition process using a device as described above, the process comprising at least the following steps: injection of the first gaseous phase into the first zone and the second gaseous phase in the second zone, transporting at least one wire through the conveying system in the processing chamber during which: said at least one wire passes through the first zone, respectively the second zone, so forming a first layer on said at least one wire by vapor deposition from the first gaseous phase, respectively from the second gaseous phase, and then said at least one wire coated with the first layer passes through the second zone, respectively the first zone to form a second layer on said first layer by vapor deposition from the second gaseous phase, respectively t of the first gaseous phase, and evacuation of the first gaseous phase remaining outside the first zone and the second gaseous phase remaining outside the second zone.
    The formation of the first and second layers can take place while said at least one wire is set in motion by the conveying system through the treatment chamber.
    The vapor deposition process implemented may be chemical vapor deposition ("CVD"), reactive chemical vapor deposition ("Reactive Chemical Vapor Deposition" or "RCVD"), or physical vapor deposition. ("Physical Vapor Deposition"; "PVD").
    In an exemplary embodiment, said at least one wire can be transported continuously by the conveying system in the treatment chamber.
    In an exemplary embodiment, the first layer and / or the second layer may be formed by chemical vapor deposition (addition of material to the surface of the wires) or by reactive chemical vapor deposition (transformation of the material present in the film). surface of the wires).
    In an exemplary embodiment, the first and second layers may each be a layer of an interphase coating.
    The layer of an interphase coating is, for example, pyrocarbon (PyC), boron nitride (BN), boron doped carbon (BC), silicon nitride (Si3N4), or a mixed boron carbide and silicon (Si-BC).
    The present invention also relates to a method of manufacturing a composite material part comprising at least the following steps: coating of a plurality of son by an interphase coating at least by implementing a method as described above, - forming a fiber preform at least by carrying out one or more textile operations from the yarns thus coated by the interphase coating, and - densifying the fiber preform with a matrix in order to obtain a piece of composite material.
    Preferably, the fibrous preform is obtained by weaving, for example by three-dimensional weaving, from the yarns coated with the interphase coating.
    The matrix may comprise a ceramic material such as silicon carbide or be carbon. The matrix can be formed by any type of process known as chemical vapor infiltration ("Chemical Vapor Infiltration") or melt infiltration ("Melt-Infiltration"), for example.
    The formed part may, for example, be a turbomachine blade or a turbine ring sector, for example.
    BRIEF DESCRIPTION OF THE DRAWINGS Other characteristics and advantages of the invention will emerge from the following description of particular embodiments of the invention, given by way of non-limiting examples, with reference to the appended drawings, in which: FIG. 1 schematically represents a longitudinal section of an exemplary device according to the invention; FIG. 2 schematically and partially shows a cross-section of the device of FIG. 1; FIG. 3 schematically represents a longitudinal section; 4 schematically and partially shows a cross section of another variant of the device according to the invention, and - Figure 5 schematically and partially shows a longitudinal section. of the device illustrated in FIG.
    Detailed description of embodiments
    FIG. 1 shows a device 1 according to the invention for coating a plurality of wires 2 by a vapor deposition process. As illustrated in FIG. 1, the device 1 comprises a treatment chamber 4 defining at least a first 4a and a second treatment zone 4b in which the wires 2 are intended to be coated by implementing a deposition process. vapor phase. Yarns 2 intended to be coated are not bonded together (in particular these yarns are not woven, knitted or braided). These yarns 2 have not undergone textile operation and do not form a fibrous structure. A separate layer is formed by a vapor deposition process in each of these areas 4a and 4b. The device 1 illustrated in Figure 1 allows to form a bilayer coating on the son 2 by vapor deposition. The son 2 may be formed of a ceramic material, for example an oxide material, nitride, carbide, for example silicon carbide (SiC). Alternatively, the son 2 may be carbon son. In an exemplary embodiment, a portion of the son 2 is formed of a ceramic material and part of the son 2 is carbon. In an exemplary embodiment, at least 20 wires, for example between 20 and 200 wires can be processed simultaneously. In the illustrated example, the first zone 4a surrounds the second zone 4b and is separated therefrom by an inner circumferential wall 5. The first zone 4a extends along a first longitudinal axis Xi. The first treatment zone 4a is present between an inner circumferential wall 5 and an outer circumferential wall 7. The first zone 4a is of annular shape when observed in section perpendicular to the first longitudinal axis Xi. In the example illustrated in Figures 1 and 2, the first zone 4a has a generally circular shape when observed in section perpendicular to the first longitudinal axis. However, it is not beyond the scope of the invention when the first zone has another shape such as an elliptical or polygonal general shape, for example rectangular or square, when observed in section perpendicular to the first longitudinal axis. The second zone 4b extends along a second longitudinal axis X2, which in the illustrated example is parallel to the first longitudinal axis Xi. In the example illustrated in Figures 1 and 2, the second zone 4b has a generally circular shape when observed in section perpendicular to the second longitudinal axis. However, it is not beyond the scope of the invention when the second zone has another shape such as an elliptical or polygonal general shape, for example rectangular or square, when observed in section perpendicular to the second longitudinal axis. In the example illustrated, the inner circumferential wall 5 and the outer circumferential wall 7 are concentric (see FIG. 2). The distance d 1 between the inner circumferential wall 5 and the outer circumferential wall 7 may be greater than or equal to 0.02 m (see FIG. 2). This distance di may be less than or equal to 0.1 m and for example be between 0.02 m and 0.1 m. The distance di is measured perpendicularly to the first longitudinal axis Xi.
    The wires 2 are distributed circumferentially in the first and second zones 4a and 4b (see FIG. 2). Such a distribution of the son 2 advantageously makes it possible to increase the number of son treated per unit time compared to a rectilinear distribution of the son.
    The conveying system 6 is configured to carry the wires through the first 4a and second 4b zones. More specifically, the conveying system 6 is, in the example shown in Figure 1, configured to carry the son 2 through successively the first zone 4a and the second zone 4b. Thus, in the example illustrated, the son 2 are transported by the conveying system 6 through the first zone 4a and then through the second zone 4b. Alternatively, the conveying system may be configured to carry the son through successively the second zone and the first zone (the son first pass through the second zone and then the first zone).
    The conveying system 6 comprises, in the illustrated example, a first set of pulleys 6a, a second set of pulleys 6b and a third set of pulleys 6c. The first 6a, second 6b and third 6c sets of pulleys are each positioned, in the illustrated example, annularly around the second longitudinal axis X2. The pulleys 6a of the first set and the pulleys 6b of the second set are configured to convey the threads through the first area 4a. The pulleys 6b of the second set and the pulleys 6c of the third set are configured to transport the wires 2 through the second zone 4b.
    The conveying system 6 is configured so that the threads 2 carry out two successive passes through the treatment chamber 4. In the example illustrated, the threads 2 to be treated, transported by the pulleys of the first and second assemblies, perform all the necessary steps. firstly a first passage through the first zone 4a and then these son 2, transported by the pulleys of the second and third sets, make a second pass through the second zone 4b.
    The device 1 further comprises a first injection device configured to inject a first gaseous treatment phase in the first zone 4a and a first evacuation device configured to evacuate the first residual gaseous phase 11d from the first zone 4a. . The first evacuation device is configured to evacuate the first residual gas phase 11d from the treatment chamber 4 through one or more outlets 9a. In order to carry out the evacuation of the first residual gaseous phase 11d, the outlet orifice (s) 9a are connected with suction means such as a vacuum pump (not shown).
    The first injection device further has at least a first 8a and a second 8b injection ports offset along the first longitudinal axis Xi and opening into the first zone 4a. Advantageously, a first portion 11a of the first gaseous phase may be injected into the first zone 4a through the first injection orifice 8a and a second portion 11b of the first gaseous phase, different from the first, may be injected into the first zone 4a through the second injection orifice 8b. The first injection device comprises, in the illustrated example, a plurality of pairs of such first 8a and second 8b injection ports. It is not beyond the scope of the present invention when the first injection device comprises a single injection orifice through which the first gas phase is injected into the first zone, this orifice may for example have an annular shape.
    In the example illustrated in FIG. 1, the first injection device comprises a plurality of first injection channels 18a each opening into the first zone 4a through a first injection orifice 8a and a plurality of second channels injection 18b each opening into the first zone 4a through a second injection port 8b. The first injection channels 18a are configured to inject a portion of the first gas phase 11a distinct from that 11b to be injected through the second injection channels 18b. The injection through the first 18a and second 18b channels is performed in an injection direction substantially parallel to the first longitudinal axis Xi. A distributing element of the gas stream for distributing on the section of the first zone 4a the gaseous phases 11a and 11b injected may be positioned at the outlet of the channels 18a and 18b.
    The device 1 further comprises a second injection device configured for injecting a second treatment gas phase into the second zone 4b and a second evacuation device configured to evacuate the second residual gas phase 12d out of the second zone 4b. . The second evacuation device is configured to evacuate the second residual gas phase 12d out of the treatment chamber 4 through one or more outlets 9b. In order to carry out the evacuation of the second residual gas phase 12d, the outlet orifice (s) 9b are connected with suction means such as a vacuum pump (not shown).
    The second injection device has at least a first 8d and a second 8th injection orifices offset along the second longitudinal axis X2 and opening into the second zone 4b. Advantageously, a first portion 12a of the second gaseous phase can be injected into the second zone 4b through the first injection orifice 8d and a second portion 12b of the second gaseous phase, different from the first, can be injected into the second zone 4b through the second injection orifice 8e. The second injection device may in an exemplary embodiment have a plurality of pairs of such first and second injection orifices. It is not beyond the scope of the present invention when the second injection device comprises a single injection orifice through which the second gas phase is injected into the second zone 4b.
    The second injection device comprises a first injection channel 18c opening into the second zone 4b through the first injection orifice 8d and a second injection channel 18d opening into the second zone 4b through the second orifice of FIG. 8th injection. In the illustrated example, the first injection channel 18c of the second injection device and the second injection channel 18d of the second injection device are each configured to inject a distinct part of the second gas phase into the second zone 4b according to an injection direction substantially parallel to the second longitudinal axis X2. As described above with respect to the first zone 4a, a gas flow distributor element for distributing on the section of the second zone 4b the gaseous phases 12a and 12b injected can be positioned at the outlet of the channels 18c and 18d.
    The device 1 further comprises a heating system configured to heat the first 4a and second 4b treatment zones in order to perform the vapor deposition. More specifically, the heating system comprises a first susceptor 20, a second susceptor 20 'and an inductor 13. The susceptors 20 and 20' are coupled inductively with the inductor 13 which is located outside the chamber of 4. The first 20 and second 20 'susceptors are present, in the illustrated example, inside the treatment chamber 4 in the first zone 4a. The first 20 and second 20 'susceptors are ring-shaped. The first susceptor 20 is located on the side of the outer circumferential wall 7 and the second susceptor 20 'is located on the side of the inner circumferential wall 5. The first zone 4a is delimited radially by the first 20 and second 20' susceptors. The first zone 4a is located between the first 20 and second 20 'susceptors.
    In a variant not shown, the device comprises an inductor and a single susceptor which may be located inside the treatment chamber or outside thereof.
    The inner circumferential wall 5 is coated with a reflective material of infrared radiation. This advantageously makes it possible to control the temperature imposed in the second zone 4b without having to place a susceptor in said second zone 4b. Such a characteristic thus contributes to simplifying the structure of the device 1.
    In order to achieve the son coating 2 by an interphase coating, it is possible to implement the following method. The son 2 are first transported through the first zone 4a. Part of the first gaseous phase is injected through the first injection orifices 8a and another part of the first gaseous phase is injected through the second injection orifices 8b while the wires 2 are transported continuously through the first zone 4a. These two injected parts mix in the useful zone to form the first gaseous phase. A first layer of an interphase coating is then formed on the wires 2 during their transport through the first zone 4a by chemical vapor deposition from the first gaseous phase. The first gaseous phase flows along the first longitudinal axis Xi due to the suction made at the outlet openings 9a.
    The wires coated with the first layer of the interphase coating are then transported by the conveyor system 6 to the second treatment zone 4b. The conveying system 6 is as illustrated configured to make the son a half-turn (inversion of the direction of the path of the son). A second gaseous treatment phase is injected into this second zone 4b by the second injection device so as to form on the coated wires of the first layer a second layer of an interphase coating by chemical vapor deposition. As for the first gaseous phase, a portion of the second gaseous phase 12a is injected through the first injection orifice 8d and another part of the second gaseous phase 12b is injected through the second injection orifice 8e while the son 2 are transported continuously through the second zone 4b. The second residual gaseous phase 12d is discharged through the outlet orifice 9b. The second layer may be formed of a material identical to or different from that forming the first layer. The temperature imposed in the first zone 4a may be different from the temperature imposed in the second zone 4b. Alternatively, the temperature imposed in the first zone 4a is substantially equal to the temperature imposed in the second zone 4b.
    The gaseous phases for forming the chemical vapor deposition comprise one or more precursors of the material of the layer to be formed. When a carbon interphase coating is intended to be formed, the gaseous phases may comprise one or more gaseous hydrocarbons, for example chosen from methane, ethane, propane and butane. The gaseous phases may alternatively comprise a gaseous precursor of a ceramic material such as methyltrichlorosilane. In order to achieve a given deposit, the choice of the precursor (s) to be used as well as the pressure and temperature conditions to be imposed in the first and second treatment zones are part of the general knowledge of those skilled in the art.
    As mentioned above, the conveying system 6 can advantageously comprise an element for adjusting the speed of travel of the threads 2 through the processing chamber 4. By varying the speed of movement of the threads 2, a user can thus modify the residence time of the son in the treatment zones and consequently modify the thickness of the layer or layers formed on the son. Once the running speed has been set, the person skilled in the art is able to determine from his general knowledge the values of the flow rates of the gaseous phases to be employed in order to obtain the desired vapor phase deposition.
    The scroll speed imposed on the son 2 during all or part of their path through the treatment chamber 4 may be greater than or equal to 0.01 meter / minute. The speed of scrolling imposed on the threads 2 during all or part of their path through the processing chamber 4 may be less than or equal to 5 meters / minute and for example be between 0.01 meter / minute and 5 meters / minute. . By way of example, the flow rate of the injected first gas phase and / or the flow rate of the second gas phase injected may be greater than or equal to 0.5 liter / minute, for example between 0.5 liter / minute and liters / minute. When a part of a gaseous phase is injected through an injection orifice and when another part of the gaseous phase is injected through another injection orifice, the flow rate of said gaseous phase is equal to the sum of the flow rates of the various parts of said gaseous phase injected.
    In a variant not shown, the treatment chamber defines at least three concentric treatment zones to form a coating comprising at least three layers.
    FIG. 3 shows an alternative device 10 according to the invention in which a plurality of injection channels 180a open into the first zone 4a. Each injection channel 180a is configured to inject the first gas phase 11c into the first zone 4a in an injection direction (denoted Di for one of the injection channels 180a) not parallel to the first longitudinal axis Xi. As mentioned above, such a characteristic makes it possible to improve the filling of the section of the first zone 4a with the first gaseous phase 11c and thus to further improve the quality of the deposit formed on the son or wires. The injection direction Di forms in the example shown an angle α between 30 ° and 60 ° with the first longitudinal axis Xi. In the same way, the device 10 comprises a plurality of injection channels 180b opening into the second zone 4b. Each injection channel 180b is configured to inject the second gas phase 12c into the second zone 4b in an injection direction (denoted D2 for one of the injection channels 180b) not parallel to the second longitudinal axis X2. As mentioned above, such a characteristic makes it possible to improve the filling of the section of the second zone 4b with the second gaseous phase 12c and thus to further improve the quality of the deposit formed on the son or wires. The injection direction D2 forms in the illustrated example an angle a2 between 30 ° and 60 ° with the second longitudinal axis X2.
    It is not beyond the scope of the invention when the device comprises injection channels each for injecting only a portion of the treatment gas phase into a treatment zone with a non-zero angle with respect to the longitudinal axis. of said treatment zone.
    FIG. 4 illustrates an alternative device 100 according to the invention in which the first zone 40a is superimposed on the second zone 40b. The first 40a and second 40b zones are separated by the wall 50. The processing chamber 40 is delimited by the wall 70. In the example illustrated in FIG. 4, the first zone 40a has a generally rectangular shape when observed in section perpendicular to its longitudinal axis Xi. The second zone 40b also has a generally rectangular shape when observed in section perpendicular to its longitudinal axis X2. It is not beyond the scope of the invention when the sections of the first and second zones have different shapes. As illustrated in FIG. 5, the conveying system 60 comprises a first set of pulleys 60a, a second set of pulleys 60b and a third set of pulleys 60c. The pulleys 60a of the first set and the pulleys 60b of the second set are configured to convey the threads through the first area 40a. The pulleys 60b of the second set and the pulleys 60c of the third set are configured to transport the threads 2 through the second area 40b.
    The conveying system 60 is configured to make the son 2 two successive passages through the processing chamber 40. In the example illustrated, the son 2, transported by the pulleys of the first and second sets, perform first a first passage through the first zone 40a and son 2, transported by the pulleys of the second and third sets, make a second pass through the second zone 40b. In the example illustrated in FIG. 5, the longitudinal axis X2 of the second treatment zone 40b is parallel to the longitudinal axis Xi of the first treatment zone 40a. It is not beyond the scope of the invention when the longitudinal axis of the first treatment zone forms a non-zero angle with the longitudinal axis of the second treatment zone.
    Example
    A bi-layered interphase coating of boron nitride and silicon carbide was deposited by a vapor deposition process on a plurality of wires running in a treatment chamber of the type illustrated in FIG. threads are carbon threads or yarns of ceramic material (SiC or Si-CO yarns, such as Nicalon®, Hi-Nicalon® or Hi-Nicalon® Type S yarns from Nippon
    Carbon). A first gaseous treatment phase was injected into the first treatment zone 4a and a second gaseous treatment phase was injected into the second treatment zone 4b. The diameter of the outer circumferential wall 7 was 0.5 m and the inner circumferential wall diameter was 0.45 m. The value of the wire speed in the first and second treatment zones was set at 100 millimeters / minute. The heating length (i.e. the length of the susceptors) was 500 mm. The inner circumferential wall 5 was covered with a layer of indium-tin oxide (infrared reflective material) having a thickness of 0.002 mm.
    The following parameters have been imposed for carrying out the vapor deposition in the first treatment zone 4a (relative to the first gaseous phase): temperature of 1100 ° C., alpha coefficient (corresponding to the ratio (volume flow rate of NH 3) (volume flow of BCI3)) of 1.3, - beta coefficient (corresponding to the ratio (volume flow rate of H2) / (flow rate of BCI3 + flow rate of NH3)) of 1, - total pressure of 0.2 kPa, - residence time of 87 milliseconds, - treatment time of 300 minutes.
    Specifically, the following flow rates were imposed for the first gaseous treatment phase: - H2: 1.69 L / min - NH3: 0.95 L / min - BCI3: 0.73 L / min - Total: 3.38 L / min
    The following parameters have been imposed for carrying out vapor phase deposition in the second treatment zone 4b (relative to the second gaseous phase): 1000 ° C. temperature, alpha coefficient (corresponding to the ratio (volume flow rate of H 2) (volume flow of MTS)) of 8, total pressure of 100 kPa, residence time of 2000 milliseconds, treatment time of 300 minutes.
    Specifically, the following flow rates were imposed for the second gaseous treatment phase: - H2: 3.2 IVmin - MTS: 0.4 L / min
    These treatment conditions made it possible to obtain a two-layer interphase coating of boron and silicon carbide coating having a total thickness of the order of 300 nm. The expression "understood between ... and ..." or "from ... to ..." must be understood as including the boundaries.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    Apparatus (1; 10; 100) for coating one or more yarns (2) by a vapor deposition process comprising at least: a treatment chamber (4; 40) defining at least a first zone of treatment (4a, 40a) and a second treatment zone (4b; 40b) in which at least one wire (2) is intended to be coated by a vapor deposition process, the first and second zones being separated by a wall (5; 50) and the first zone surrounding the second zone or being superimposed on the second zone, a conveying system (6; 60) configured to transport said at least one wire (2) to through first (4a; 40a) and second (4b; 40b) zones, a first injection device configured to inject a first treatment gas phase into the first zone (4a; 40a) and a first evacuation device configured to evacuate the first residual gaseous phase (lld ) out of the first zone (4a; 40a), and a second injection device configured to inject a second gaseous treatment phase into the second zone (4b; 40b) and a second evacuation device configured to evacuate the second residual gas phase (12d) out of the second zone (4b; 40b).
    [2" id="c-fr-0002]
    2. Device (10) according to claim 1, wherein the first zone (4a) extends along a first longitudinal axis (Xi) and wherein at least a first injection channel (180a) opens into the first zone (4a), said first injection channel (180a) being configured to inject at least a portion of the first gas phase into the first zone (4a) in a first injection direction (Di) not parallel to the first axis longitudinal (Xi).
    [3" id="c-fr-0003]
    3. Device (10) according to claim 2, wherein the first injection direction (Di) forms an angle (α-ι) between 30 ° and 60 ° with the first longitudinal axis (Xi).
    [4" id="c-fr-0004]
    4. Device (10) according to any one of claims 1 to 3, wherein the second zone (4b) extends along a second longitudinal axis (X2) and wherein at least a second injection channel (180b) opens into the second zone (4b), said second injection channel (180b) being configured to inject at least a portion of the second gas phase into the second zone (4b) in a second injection direction (D2 ) not parallel to the second longitudinal axis (X2).
    [5" id="c-fr-0005]
    5. Device (10) according to claim 4, wherein the second injection direction (D2) forms an angle (a2) between 30 ° and 60 ° with the second longitudinal axis (X2).
    [6" id="c-fr-0006]
    6. Device (1) according to any one of claims 1 to 5, wherein the first zone (4a) extends along a first longitudinal axis (Xi) and wherein the first injection device has injection ports (8a; 8b) opening into the first zone (4a), these injection ports (8a; 8b) being offset along the first longitudinal axis (Xi).
    [7" id="c-fr-0007]
    7. Device (1) according to any one of claims 1 to 6, wherein the second zone (4b) extends along a second longitudinal axis (X2) and wherein the second injection device has injection ports (8d, 8e) opening into the second zone (4b), these injection ports (8d; 8e) being offset along the second longitudinal axis (X2).
    [8" id="c-fr-0008]
    8. Device (1; 10; 100) according to any one of claims 1 to 7, wherein the wall is coated with a layer reflecting infrared radiation.
    [9" id="c-fr-0009]
    9. Device (1; 10; 100) according to any one of claims 1 to 8, wherein the conveying system (6; 60) comprises an element for adjusting the running speed of said at least one wire (2). through the treatment chamber (4; 40).
    [10" id="c-fr-0010]
    Device (1; 10) according to any one of claims 1 to 9, wherein the first zone (4a) surrounds the second zone (4b) and wherein the conveying system (6) is further configured to position the yarns (2) to be circumferentially treated in each of the first (4a) and second (4b) areas.
    [11" id="c-fr-0011]
    11. A process for coating one or more yarns (2) by a vapor deposition method using a device (1; 10; 100) according to any one of claims 1 to 10, the method comprising at least the following steps: injection of the first gas phase in the first zone (4a; 40a) and the second gas phase in the second zone (4b; 40b), transport of at least one wire (2) by the conveying system (6; 60) in the treatment chamber (4; 40) during which: said at least one wire passes through the first zone (4a; 40a), respectively the second zone (4b; 40b), so as to form a first layer on said at least one wire by vapor deposition from the first gas phase, respectively from the second gas phase, then said at least one wire coated with the first layer passes through the second zone (4b; 40b), respectively the first zone; (4a; 40a), to form a second layer on said first re layer by vapor deposition from the second gas phase, respectively of the first gas phase, and evacuation of the first residual gas (IId) from the first region (4a; 40a) and the second residual gaseous phase (12d) out of the second zone (4b; 40b).
    [12" id="c-fr-0012]
    The method of claim 11, wherein said at least one wire (2) is continuously conveyed by the conveying system (6; 60) into the processing chamber (4; 40).
    [13" id="c-fr-0013]
    The method of any of claims 11 and 12, wherein the first layer and / or the second layer is formed by chemical vapor deposition or reactive chemical vapor deposition.
    [14" id="c-fr-0014]
    The method of any one of claims 11 to 13, wherein the first and second layers are each a layer of an interphase coating.
    [15" id="c-fr-0015]
    15. A method of manufacturing a composite material part comprising at least the following steps: coating a plurality of son by an interphase coating at least by implementing a method according to claim 14, forming a a fiber preform at least by carrying out one or more textile operations from the yarns thus coated by the interphase coating, and densifying the fiber preform with a matrix in order to obtain a composite material part.
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    同族专利:
    公开号 | 公开日
    EP3377670A1|2018-09-26|
    BR112018010020A2|2018-11-21|
    US10597782B2|2020-03-24|
    RU2018122084A3|2020-01-21|
    CA3005329A1|2017-05-26|
    US20180347048A1|2018-12-06|
    JP6989499B2|2022-01-05|
    JP2018534428A|2018-11-22|
    BR112018010020B1|2021-05-25|
    CN108291297A|2018-07-17|
    RU2717620C2|2020-03-24|
    CN108291297B|2020-07-14|
    RU2018122084A|2019-12-19|
    FR3044023B1|2017-12-22|
    EP3377670B1|2019-10-09|
    WO2017085412A1|2017-05-26|
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    法律状态:
    2016-11-10| PLFP| Fee payment|Year of fee payment: 2 |
    2017-05-26| PLSC| Publication of the preliminary search report|Effective date: 20170526 |
    2017-10-20| PLFP| Fee payment|Year of fee payment: 3 |
    2018-08-17| CD| Change of name or company name|Owner name: SAFRAN CERAMICS, FR Effective date: 20180716 |
    2018-10-24| PLFP| Fee payment|Year of fee payment: 4 |
    2019-10-22| PLFP| Fee payment|Year of fee payment: 5 |
    2020-10-21| PLFP| Fee payment|Year of fee payment: 6 |
    2021-10-20| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1561149A|FR3044023B1|2015-11-19|2015-11-19|DEVICE FOR COATING ONE OR MORE WIRES BY A STEAM-PHASE DEPOSITION PROCESS|FR1561149A| FR3044023B1|2015-11-19|2015-11-19|DEVICE FOR COATING ONE OR MORE WIRES BY A STEAM-PHASE DEPOSITION PROCESS|
    RU2018122084A| RU2717620C2|2015-11-19|2016-11-17|Device for application of coating on one or several threads by method of deposition from vapour phase|
    PCT/FR2016/052990| WO2017085412A1|2015-11-19|2016-11-17|Device for the coating of one or more wires using a vapour phase deposition method|
    JP2018526121A| JP6989499B2|2015-11-19|2016-11-17|A device that coats one or more yarns by a thin-film deposition method.|
    EP16815583.6A| EP3377670B1|2015-11-19|2016-11-17|Device for the coating of one or more wires using a vapour phase deposition method|
    CN201680067915.1A| CN108291297B|2015-11-19|2016-11-17|Device for coating one or more threads by vapour deposition|
    CA3005329A| CA3005329A1|2015-11-19|2016-11-17|Device for the coating of one or more wires using a vapour phase deposition method|
    US15/777,492| US10597782B2|2015-11-19|2016-11-17|Device for coating one or more yarns by a vapor deposition method|
    BR112018010020-0A| BR112018010020B1|2015-11-19|2016-11-17|device and method for coating one or more strands, and, method for fabricating a composite material piece|
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